-
1
-
-
0036041001
-
-
ARMRCU 1531-7331 10.1146/annurev.matsci.32.101901.152309
-
N.A. Hill, Annu. Rev. Mater. Res. 32, 1 (2002). ARMRCU 1531-7331 10.1146/annurev.matsci.32.101901.152309
-
(2002)
Annu. Rev. Mater. Res.
, vol.32
, pp. 1
-
-
Hill, N.A.1
-
2
-
-
4243683822
-
-
PRBMDO 0163-1829 10.1103/PhysRevB.50.6082
-
C.W. Nan, Phys. Rev. B PRBMDO 0163-1829 50, 6082 (1994); 10.1103/PhysRevB.50.6082
-
(1994)
Phys. Rev. B
, vol.50
, pp. 6082
-
-
Nan, C.W.1
-
3
-
-
1642599454
-
-
FEROA8 0015-0193 10.1080/00150190214796
-
C.W. Nan, Y.H. Lin, and J.H. Huang, Ferroelectrics 280, 153 (2002). FEROA8 0015-0193 10.1080/00150190214796
-
(2002)
Ferroelectrics
, vol.280
, pp. 153
-
-
Nan, C.W.1
Lin, Y.H.2
Huang, J.H.3
-
4
-
-
0037436499
-
-
SCIEAS 0036-8075 10.1126/science.1080615
-
J. Wang, Science SCIEAS 0036-8075 299, 1719 (2003). 10.1126/science. 1080615
-
(2003)
Science
, vol.299
, pp. 1719
-
-
Wang, J.1
-
5
-
-
0942288723
-
-
PRLTAO 0031-9007 10.1103/PhysRevLett.91.257208
-
G. Lawes, A.P. Ramirez, C.M. Varma, and M.A. Subramanian, Phys. Rev. Lett. 91, 257208 (2003). PRLTAO 0031-9007 10.1103/PhysRevLett.91.257208
-
(2003)
Phys. Rev. Lett.
, vol.91
, pp. 257208
-
-
Lawes, G.1
Ramirez, A.P.2
Varma, C.M.3
Subramanian, M.A.4
-
6
-
-
0344877162
-
-
NATUAS 0028-0836 10.1038/nature02018
-
T. Kimura, Nature (London) NATUAS 0028-0836 426, 55 (2003); 10.1038/nature02018
-
(2003)
Nature (London)
, vol.426
, pp. 55
-
-
Kimura, T.1
-
7
-
-
3543070519
-
-
PRLTAO 0031-9007 10.1103/PhysRevLett.92.257201
-
T. Goto, Phys. Rev. Lett. 92, 257201 (2004); PRLTAO 0031-9007 10.1103/PhysRevLett.92.257201
-
(2004)
Phys. Rev. Lett.
, vol.92
, pp. 257201
-
-
Goto, T.1
-
8
-
-
2642584216
-
-
NATUAS 0028-0836 10.1038/nature02572
-
N. Hur, Nature (London) NATUAS 0028-0836 429, 392 (2004). 10.1038/nature02572
-
(2004)
Nature (London)
, vol.429
, pp. 392
-
-
Hur, N.1
-
10
-
-
0016118383
-
-
JMTSAS 0022-2461 10.1007/BF00540771
-
A.M.J.G. van Run, J. Mater. Sci. JMTSAS 0022-2461 9, 1710 (1974); 10.1007/BF00540771
-
(1974)
J. Mater. Sci.
, vol.9
, pp. 1710
-
-
Van Run, A.M.J.G.1
-
12
-
-
0031370449
-
-
FEROA8 0015-0193
-
M.I. Bichurin, Ferroelectrics 204, 289 (1997); FEROA8 0015-0193
-
(1997)
Ferroelectrics
, vol.204
, pp. 289
-
-
Bichurin, M.I.1
-
13
-
-
0033734785
-
-
MCHPDR 0254-0584 10.1016/S0254-0584(00)00216-9
-
K.K. Patankar, Mater. Chem. Phys. 65, 97 (2000); MCHPDR 0254-0584 10.1016/S0254-0584(00)00216-9
-
(2000)
Mater. Chem. Phys.
, vol.65
, pp. 97
-
-
Patankar, K.K.1
-
14
-
-
0036537496
-
-
PRBMDO 0163-1829 10.1103/PhysRevB.65.134402
-
G. Srinivasan, Phys. Rev. B PRBMDO 0163-1829 65, 134402 (2002). 10.1103/PhysRevB.65.134402
-
(2002)
Phys. Rev. B
, vol.65
, pp. 134402
-
-
Srinivasan, G.1
-
15
-
-
0000091288
-
-
APPLAB 0003-6951 10.1063/1.1367293
-
C.W. Nan, M. Li, X.Q. Feng, and S. Yu, Appl. Phys. Lett. 78, 2527 (2001); APPLAB 0003-6951 10.1063/1.1367293
-
(2001)
Appl. Phys. Lett.
, vol.78
, pp. 2527
-
-
Nan, C.W.1
Li, M.2
Feng, X.Q.3
Yu, S.4
-
16
-
-
0034894832
-
-
PRBMDO 0163-1829 10.1103/PhysRevB.63.144415
-
C.W. Nan, M. Li, and J.H. Huang, Phys. Rev. B PRBMDO 0163-1829 63, 144415 (2001). 10.1103/PhysRevB.63.144415
-
(2001)
Phys. Rev. B
, vol.63
, pp. 144415
-
-
Nan, C.W.1
Li, M.2
Huang, J.H.3
-
17
-
-
10944252664
-
-
JACTAW 0002-7820
-
J. Ruy, J. Am. Ceram. Soc. 84, 2905 (2001); JACTAW 0002-7820
-
(2001)
J. Am. Ceram. Soc.
, vol.84
, pp. 2905
-
-
Ruy, J.1
-
18
-
-
79958203721
-
-
APPLAB 0003-6951 10.1063/1.1491006
-
K. Mori and M. Wuttig, Appl. Phys. Lett. 81, 100 (2002); APPLAB 0003-6951 10.1063/1.1491006
-
(2002)
Appl. Phys. Lett.
, vol.81
, pp. 100
-
-
Mori, K.1
Wuttig, M.2
-
20
-
-
0348197043
-
-
APPLAB 0003-6951 10.1063/1.1631756
-
S.X. Dong, J.R. Cheng, J.F. Li, and D. Viehland, Appl. Phys. Lett. 83, 4812 (2003). APPLAB 0003-6951 10.1063/1.1631756
-
(2003)
Appl. Phys. Lett.
, vol.83
, pp. 4812
-
-
Dong, S.X.1
Cheng, J.R.2
Li, J.F.3
Viehland, D.4
-
22
-
-
1642403692
-
-
JAPIAU 0021-8979 10.1063/1.1645648
-
G. Liu, C.W. Nan, N. Cai, and Y.H. Lin, J. Appl. Phys. 95, 2660 (2004). JAPIAU 0021-8979 10.1063/1.1645648
-
(2004)
J. Appl. Phys.
, vol.95
, pp. 2660
-
-
Liu, G.1
Nan, C.W.2
Cai, N.3
Lin, Y.H.4
-
23
-
-
9144268879
-
-
SCIEAS 0036-8075 10.1126/science.1094207
-
H. Zheng, Science SCIEAS 0036-8075 303, 661 (2004). 10.1126/science. 1094207
-
(2004)
Science
, vol.303
, pp. 661
-
-
Zheng, H.1
-
24
-
-
27144484461
-
-
edited by K.H. Hellwege and A.M. Hellwege, Landolt-Bornstein Group III, Vol. Springer, Berlin
-
V.J. Folen, in Magnetic and Other Properties of Oxides and Related Compounds, edited by, K.H. Hellwege, and, A.M. Hellwege, Landolt-Bornstein Group III, Vol. 4, Pt. b (Springer, Berlin, 1970), p. 366.
-
(1970)
Magnetic and Other Properties of Oxides and Related Compounds
, vol.4
, pp. 366
-
-
Folen, V.J.1
-
25
-
-
0000677610
-
-
PRBMDO 0163-1829 10.1103/PhysRevB.48.8578
-
C.W. Nan and F. Jin, Phys. Rev. B PRBMDO 0163-1829 48, 8578 (1993); 10.1103/PhysRevB.48.8578
-
(1993)
Phys. Rev. B
, vol.48
, pp. 8578
-
-
Nan, C.W.1
Jin, F.2
-
26
-
-
0000914619
-
-
JAPIAU 0021-8979 10.1063/1.357839
-
C.W. Nan, J. Appl. Phys. 76, 1155 (1994). JAPIAU 0021-8979 10.1063/1.357839
-
(1994)
J. Appl. Phys.
, vol.76
, pp. 1155
-
-
Nan, C.W.1
-
28
-
-
27144497570
-
-
The properties of BaTiO3 and CoFe2O4 used in the numerical calculations were given as (c11p,c12p,c13p,c33p)=(166.2,76.5,77.4,161.4)GPa, κ33p/κo=1350, (e31p,e33p)=(-4.22,18.6)C/m2, and Ps3=26μC/cm2 for BaTiO3, and (c11m,c12m,c13m,c33m)=(286.0,173.0,170.5,269.5)Gpa and κ33m/κo=10 for CoFe2O4. From Ref. , the out-of-plane residual strains in the 1-3 nanostructured film were given as εs33p=-εs33m=0. 8%, and the in-plane residual strains were determined as εs33p=-1% and εs33m=-1.89% from the lattice constant mismatches between BaTiO3 and the substrate and between CoFe2O4 and the substrate. In the 2-2 type film, however, there exists only the in-plain residual strains, and εs11p=-1% and εs11m=-1.6% estimated from the lattice constant mismatches.
-
The properties of BaTiO3 and CoFe2O4 used in the numerical calculations were given as (c11p,c12p,c13p,c33p)=(166.2,76.5,77.4,161.4)GPa, κ33p/κo=1350, (e31p,e33p)=(-4.22,18.6)C/m2, and Ps3=26μC/cm2 for BaTiO3, and (c11m,c12m,c13m,c33m)=(286.0,173.0,170.5,269.5)Gpa and κ33m/κo=10 for CoFe2O4. From Ref., the out-of-plane residual strains in the 1-3 nanostructured film were given as εs33p=-εs33m=0.8%, and the in-plane residual strains were determined as εs33p=-1% and εs33m=-1.89% from the lattice constant mismatches between BaTiO3 and the substrate and between CoFe2O4 and the substrate. In the 2-2 type film, however, there exists only the in-plain residual strains, and εs11p=-1% and εs11m=-1.6% estimated from the lattice constant mismatches.
-
-
-
-
29
-
-
27144517113
-
-
The 1-3 and 2-2 type bulk composites of BaTiO3/CoFe2O4 are normal BaTiO3/CoFe2O4 ceramic composites, i.e., CoFe2O4 ceramic rods embedded in BaTiO3 ceramic matrix for the 1-3 type, and laminated BaTiO3 and CoFe2O4 ceramic layers for the 2-2 composite.
-
The 1-3 and 2-2 type bulk composites of BaTiO3/CoFe2O4 are normal BaTiO3/CoFe2O4 ceramic composites, i.e., CoFe2O4 ceramic rods embedded in BaTiO3 ceramic matrix for the 1-3 type, and laminated BaTiO3 and CoFe2O4 ceramic layers for the 2-2 composite.
-
-
-
|