Effect of oxygen vacancy defect on the magnetic properties of Co-doped ZnO diluted magnetic semiconductor

Wuli Xuebao/Acta Physica Sinica

Volumn 58, Issue 4, 2009, Pages 2707-2712

  Chen, Jing ^a,b   Jin, Guo Jun ^a   Ma, Yu Qiang ^a  

^a NANJING UNIVERSITY   (China)

^b Huaiyin Teacher College   (China)

Author keywords

Co doped ZnO; Diluted magnetic semiconductor; First principles calculation; Oxygen vacancy defect

Indexed keywords

EID: 65449150638     PISSN: 10003290     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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