Experimental determination of the effective minority carrier lifetime in the operation of a quantum-well n-p-n heterojunction bipolar light-emitting transistor of varying base quantum-well design and doping

Applied Physics Letters

Volumn 91, Issue 3, 2007, Pages

  Then, H W ^a   Feng, M ^a   Holonyak, N ^a   Wu, C H ^a  

^a United States of America   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC PROPERTIES; HETEROJUNCTIONS; LIGHT EMITTING DIODES; QUANTUM THEORY; QUANTUM WELL LASERS;

BIPOLAR LIGHT-EMITTING TRANSISTORS; DYNAMICAL OPERATING CONDITIONS; QUANTUM-WELL DESIGN;

BIPOLAR TRANSISTORS;

EID: 34547227156     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2759263     Document Type: Article

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