Thermoelectric properties of stoichiometric and hole-doped CrN

Applied Physics Letters

Volumn 94, Issue 15, 2009, Pages

  Quintela, C X ^a   Rivadulla, F ^a   Rivas, José Maria ^a  

^a UNIVERSITY OF SANTIAGO DE COMPOSTELA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

NITRIDES; SEMICONDUCTOR DOPING; THERMAL CONDUCTIVITY; TRANSITION METALS; TUNGSTEN;

CHROMIUM NITRIDE; DEGENERATE SEMICONDUCTORS; MINIMUM VALUE; THERMO-ELECTRIC MATERIALS; THERMOELECTRIC FIGURE OF MERIT; THERMOELECTRIC PROPERTIES; THROUGH HOLE; TRANSITION METAL NITRIDES;

THERMOELECTRIC EQUIPMENT;

EID: 65249180078     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3120280     Document Type: Article

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