-
1
-
-
0037091704
-
Magnetic tunnel junction device with perpendicular magnetization films for high-density magnetic random access memory
-
N. Nishimura, T. Hirai, A. Koganei, T. Ikeda, K. Okano, Y. Sekiguchi, and Y. Osada, "Magnetic tunnel junction device with perpendicular magnetization films for high-density magnetic random access memory," J. Appl. Phys., vol. 91, p. 5246, 2002.
-
(2002)
J. Appl. Phys.
, vol.91
, pp. 5246
-
-
Nishimura, N.1
Hirai, T.2
Koganei, A.3
Ikeda, T.4
Okano, K.5
Sekiguchi, Y.6
Osada, Y.7
-
2
-
-
20944440387
-
Magnetoresistance behavior of a magnetic tunnel junction with perpendicularly magnetized Co/Pd multilayers
-
D. Lim, S. Kim, and S. Lee, "Magnetoresistance behavior of a magnetic tunnel junction with perpendicularly magnetized Co/Pd multilayers," J. Appl. Phys., vol. 97, p. 10C902, 2005.
-
(2005)
J. Appl. Phys.
, vol.97
-
-
Lim, D.1
Kim, S.2
Lee, S.3
-
3
-
-
20944440478
-
Switching characteristics of submicrometer magnetic tunnel junction devices with perpendicular anisotropy
-
I. Yoo, D. Kim, and Y. Kim, "Switching characteristics of submicrometer magnetic tunnel junction devices with perpendicular anisotropy," J. Appl. Phys., vol. 97, p. 10C919, 2005.
-
(2005)
J. Appl. Phys.
, vol.97
-
-
Yoo, I.1
Kim, D.2
Kim, Y.3
-
4
-
-
42149094954
-
Co/Pt multilayer based magnetic tunnel junctions using perpendicular magnetic anisotropy
-
J. Park, C. Park, T. Jeong, M. Moneck, N. Nuhfer, and J. Zhu, "Co/Pt multilayer based magnetic tunnel junctions using perpendicular magnetic anisotropy," J. Appl. Phys., vol. 103, p. 07A917, 2008.
-
(2008)
J. Appl. Phys.
, vol.103
-
-
Park, J.1
Park, C.2
Jeong, T.3
Moneck, M.4
Nuhfer, N.5
Zhu, J.6
-
5
-
-
77955119807
-
x trilayer
-
x trilayer," in Proc. 52nd MMM Conf., 2007, vol. AB-05.
-
(2007)
Proc. 52nd MMM Conf.
, vol.AB-05
-
-
Manchon, A.1
Pizzini, S.2
Vogel, J.3
Uhlir, V.4
Lombard, L.5
Ducruet, C.6
Auffret, S.7
Rodmacq, B.8
Dieny, B.9
Hochstrasser, M.10
Panaccione, G.11
-
6
-
-
79955994118
-
x sandwiches as a function of Al oxidation: A very accurate control of the oxidation of tunnel barriers
-
x sandwiches as a function of Al oxidation: A very accurate control of the oxidation of tunnel barriers," Appl. Phys Lett., vol. 80, p. 4157, 2002.
-
(2002)
Appl. Phys Lett.
, vol.80
, pp. 4157
-
-
Monso, S.1
Rodmacq, B.2
Auffret, S.3
Casali, G.4
Fettar, F.5
Giles, B.6
Dieny, B.7
Boyer, P.8
-
7
-
-
0038312283
-
Crossover from in-plane to perpendicular anisotropy in magnetic tunnel junctions as a function of the barrier degree of oxidation
-
B. Rodmacq, S. Auffret, B. Dieny, S. Mono, and P. Boyer, "Crossover from in-plane to perpendicular anisotropy in magnetic tunnel junctions as a function of the barrier degree of oxidation," J. Appl. Phys., vol. 93, p. 7513, 2003.
-
(2003)
J. Appl. Phys.
, vol.93
, pp. 7513
-
-
Rodmacq, B.1
Auffret, S.2
Dieny, B.3
Mono, S.4
Boyer, P.5
-
8
-
-
28344444975
-
3/Co tunnel junctions driven by oxygen adsorption
-
3/Co tunnel junctions driven by oxygen adsorption," Phys. Rev. B, vol. 71, p. 224422, 2005.
-
(2005)
Phys. Rev. B
, vol.71
, pp. 224422
-
-
Belashchenko, K.1
Tsymbal, E.2
Oleynik, I.3
Schilfgaarde, M.V.4
-
9
-
-
16644402814
-
Depositing magnetic tunnel junctions for MRAM manufacturing
-
Mar. 1
-
W. Maass and Y. Huai, "Depositing magnetic tunnel junctions for MRAM manufacturing," Semiconductor International, Mar. 1, 2005.
-
(2005)
Semiconductor International
-
-
Maass, W.1
Huai, Y.2
-
10
-
-
20944446226
-
Low resistance spin-dependent magnetic tunnel junction with high breakdown voltage for current-induced-magnetization-switching devices
-
H. Meng, J. Wang, Z. Diao, and J.-P. Wang, "Low resistance spin-dependent magnetic tunnel junction with high breakdown voltage for current-induced-magnetization-switching devices," J. Appl. Phys., vol. 973, p. 10C926, 2005.
-
(2005)
J. Appl. Phys.
, vol.973
-
-
Meng, H.1
Wang, J.2
Diao, Z.3
Wang, J.-P.4
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