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Volumn 44, Issue 11 PART 1, 2008, Pages 2577-2580

Interfacial oxidation enhanced perpendicular magnetic anisotropy in low resistance magnetic tunnel junctions composed of Co/Pt multilayer electrodes

Author keywords

Magnetic tunnel junction; Magnetoresistance; Natural oxidation; Perpendicular magnetic anisotropy

Indexed keywords


EID: 65249167359     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMAG.2008.2003071     Document Type: Article
Times cited : (5)

References (10)
  • 1
    • 0037091704 scopus 로고    scopus 로고
    • Magnetic tunnel junction device with perpendicular magnetization films for high-density magnetic random access memory
    • N. Nishimura, T. Hirai, A. Koganei, T. Ikeda, K. Okano, Y. Sekiguchi, and Y. Osada, "Magnetic tunnel junction device with perpendicular magnetization films for high-density magnetic random access memory," J. Appl. Phys., vol. 91, p. 5246, 2002.
    • (2002) J. Appl. Phys. , vol.91 , pp. 5246
    • Nishimura, N.1    Hirai, T.2    Koganei, A.3    Ikeda, T.4    Okano, K.5    Sekiguchi, Y.6    Osada, Y.7
  • 2
    • 20944440387 scopus 로고    scopus 로고
    • Magnetoresistance behavior of a magnetic tunnel junction with perpendicularly magnetized Co/Pd multilayers
    • D. Lim, S. Kim, and S. Lee, "Magnetoresistance behavior of a magnetic tunnel junction with perpendicularly magnetized Co/Pd multilayers," J. Appl. Phys., vol. 97, p. 10C902, 2005.
    • (2005) J. Appl. Phys. , vol.97
    • Lim, D.1    Kim, S.2    Lee, S.3
  • 3
    • 20944440478 scopus 로고    scopus 로고
    • Switching characteristics of submicrometer magnetic tunnel junction devices with perpendicular anisotropy
    • I. Yoo, D. Kim, and Y. Kim, "Switching characteristics of submicrometer magnetic tunnel junction devices with perpendicular anisotropy," J. Appl. Phys., vol. 97, p. 10C919, 2005.
    • (2005) J. Appl. Phys. , vol.97
    • Yoo, I.1    Kim, D.2    Kim, Y.3
  • 4
    • 42149094954 scopus 로고    scopus 로고
    • Co/Pt multilayer based magnetic tunnel junctions using perpendicular magnetic anisotropy
    • J. Park, C. Park, T. Jeong, M. Moneck, N. Nuhfer, and J. Zhu, "Co/Pt multilayer based magnetic tunnel junctions using perpendicular magnetic anisotropy," J. Appl. Phys., vol. 103, p. 07A917, 2008.
    • (2008) J. Appl. Phys. , vol.103
    • Park, J.1    Park, C.2    Jeong, T.3    Moneck, M.4    Nuhfer, N.5    Zhu, J.6
  • 7
    • 0038312283 scopus 로고    scopus 로고
    • Crossover from in-plane to perpendicular anisotropy in magnetic tunnel junctions as a function of the barrier degree of oxidation
    • B. Rodmacq, S. Auffret, B. Dieny, S. Mono, and P. Boyer, "Crossover from in-plane to perpendicular anisotropy in magnetic tunnel junctions as a function of the barrier degree of oxidation," J. Appl. Phys., vol. 93, p. 7513, 2003.
    • (2003) J. Appl. Phys. , vol.93 , pp. 7513
    • Rodmacq, B.1    Auffret, S.2    Dieny, B.3    Mono, S.4    Boyer, P.5
  • 9
    • 16644402814 scopus 로고    scopus 로고
    • Depositing magnetic tunnel junctions for MRAM manufacturing
    • Mar. 1
    • W. Maass and Y. Huai, "Depositing magnetic tunnel junctions for MRAM manufacturing," Semiconductor International, Mar. 1, 2005.
    • (2005) Semiconductor International
    • Maass, W.1    Huai, Y.2
  • 10
    • 20944446226 scopus 로고    scopus 로고
    • Low resistance spin-dependent magnetic tunnel junction with high breakdown voltage for current-induced-magnetization-switching devices
    • H. Meng, J. Wang, Z. Diao, and J.-P. Wang, "Low resistance spin-dependent magnetic tunnel junction with high breakdown voltage for current-induced-magnetization-switching devices," J. Appl. Phys., vol. 973, p. 10C926, 2005.
    • (2005) J. Appl. Phys. , vol.973
    • Meng, H.1    Wang, J.2    Diao, Z.3    Wang, J.-P.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.