SCOPUS 정보 검색 플랫폼

Volumn 105, Issue 7, 2009, Pages

75% inverse magnetoresistance at room temperature in Fe4 N/MgO/CoFeB magnetic tunnel junctions fabricated on Cu underlayer

(4) Komasaki, Yosuke a Tsunoda, Masakiyo a Isogami, Shinji a Takahashi, Migaku a

a TOHOKU UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BLOCKING LAYERS; CRYSTALLINITY; CU UNDERLAYER; ELECTRONS FLOWS; EPITAXIAL RELATIONSHIPS; INVERSE TMR; INVERSE TUNNEL MAGNETORESISTANCES; LARGE GRAINS; LATTICE MISFITS; MAGNETIC TUNNEL JUNCTIONS; ROOM TEMPERATURES; SI WAFERS; STACKING SEQUENCES; THERMAL TOLERANCES;

COBALT COMPOUNDS; COPPER; ELECTRIC RESISTANCE; MAGNETIC DEVICES; MAGNETIC FIELD EFFECTS; MAGNETOELECTRONICS; MAGNETORESISTANCE; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR JUNCTIONS; SILICON WAFERS; THERMAL EFFECTS; TUNNELS; WAVEGUIDE JUNCTIONS;

TUNNEL JUNCTIONS;

EID: 65249126403 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3072827 Document Type: Article

Times cited : (99)

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