Epitaxial growth of ferromagnetic δ-phase manganese gallium on semiconducting scandium nitride (0 0 1)

Journal of Crystal Growth

Volumn 311, Issue 8, 2009, Pages 2265-2268

  Wang, Kangkang ^a   Chinchore, Abhijit ^a   Lin, Wenzhi ^a   Ingram, David C ^a   Smith, Arthur R ^a   Hauser, Adam J ^b   Yang, Fengyuan ^b  

^a OHIO UNIVERSITY   (United States)

^b OHIO STATE UNIVERSITY   (United States)

Author keywords

A1. Interfaces; A3. Molecular beam epitaxy; B1. Alloys; B1. Nitrides; B2. Magnetic materials; B2. Semiconducting Materials

Indexed keywords

A1. INTERFACES; A3. MOLECULAR BEAM EPITAXY; B1. ALLOYS; B1. NITRIDES; B2. MAGNETIC MATERIALS; B2. SEMICONDUCTING MATERIALS;

CRYSTAL GROWTH; FERROMAGNETIC MATERIALS; FERROMAGNETISM; GALLIUM ALLOYS; MAGNETIC ANISOTROPY; MAGNETIC DEVICES; MAGNETIZATION; MANGANESE; MANGANESE COMPOUNDS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; NITRIDES; PHASE INTERFACES; SCANDIUM; SEMICONDUCTING GALLIUM; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WIRES;

EPITAXIAL GROWTH;

EID: 65249085672     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.02.033     Document Type: Article

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