Scaling properties of (111) InAs nanowire MOSFETs

Device Research Conference - Conference Digest, DRC

Volumn , Issue , 2008, Pages 179-180

  Lind, Erik ^a,c   Persson, Martin P ^b   Thelander, Claes ^a,c   Niquet, Yann Michel ^b   Samuelson, Lars ^a   Wernersson, Lars Erik ^a  

^a LUND UNIVERSITY   (Sweden)

^b CEA GRENOBLE   (France)

^c Qumat Technologies AB   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 64849109592     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2008.4800792     Document Type: Conference Paper

References (4)

1. C. Thelander, et. al., IEEE EDL 29, 206, 2007
2. CP. Auth et. al., EDL 18, 74,1997
3. A. Rahman, et. al., IEEE Trans. Electron Devices 50,1853, 2003
4. J.-M. Jancu et. al, Phys. Rev. B 57, 6493,1998