Influence of batch-to-batch substrate variation and cone effect on high energy implant distribution profile

Proceedings of the International Conference on Ion Implantation Technology

Volumn 22-27-September-2002, Issue , 2002, Pages 287-290

  Hai, Y ^a   Shauly, E N ^a  

^a TOWER SEMICONDUCTOR LTD   (Israel)

Author keywords

CMOS technology; Conductivity; Implants; Mass spectroscopy; Poles and towers; Resists; Shadow mapping; Silicon; Substrates; X ray scattering

Indexed keywords

CMOS INTEGRATED CIRCUITS; DENTAL PROSTHESES; ELECTRIC CONDUCTIVITY; ION IMPLANTATION; IONS; MASS SPECTROMETRY; PHOTORESISTS; SECONDARY ION MASS SPECTROMETRY; SILICON; X RAY SCATTERING;

CMOS TECHNOLOGY; MASS SPECTROSCOPY; POLES AND TOWERS; RESISTS; SHADOW MAPPINGS;

SUBSTRATES;

EID: 64849088789     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IIT.2002.1257995     Document Type: Conference Paper

References (4)

1. D. Kapila, A. Jain, M. Nandakumar, S. Ashburn, K. Vasanth, S. Stridhar, "The Effect of Deterministic Spatial Variations in Retrograde Well Implants on Shallow Trench Isolations for sub-0.18μM CMOS Technology" IEEE Trans. Manu., vol.12, no. 4.
2. T.Yamashita, M. Kitazanwa, Y.Kawasaki, H.Takashino, T.Kuroi, Y.Inoue, M. Inuishi "Advanced Retrograde Well Technology for 90-nmnode Embedded SRAM by high-Energy Parallel Beam " Japanese Journal of Applied Physics, Part 1 vol.41, no.4B p.2399-403.
3. J.F. Ziegler: Ion Implantation Science and technology (1996). Pages 300-307.
4. Best methods and Practices, GSD200 series, HE series, and 8250. Revision B (2000). Pages 207-217.