A quasi-four-pair class-E CMOS RF power amplifier with an integrated passive device transformer

IEEE Transactions on Microwave Theory and Techniques

Volumn 57, Issue 4, 2009, Pages 752-759

  Lee, Hongtak ^a   Park, Changkun ^a,b   Hong, Songcheol ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Hynix Semiconductor Inc   (South Korea)

Author keywords

Cascode; Class E; CMOS power amplifier (PA); Impedance transformation; Integrated passive device (IPD); Output power

Indexed keywords

CASCODE; CLASS-E; CMOS POWER AMPLIFIER (PA); IMPEDANCE TRANSFORMATION; INTEGRATED PASSIVE DEVICE (IPD); OUTPUT POWER;

CELLULAR TELEPHONE SYSTEMS; GLOBAL SYSTEM FOR MOBILE COMMUNICATIONS; POWER AMPLIFIERS;

FLIP CHIP DEVICES;

EID: 64749101893     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2009.2015122     Document Type: Conference Paper

References (14)

1. I. Aoki, S. D. Kee, D. B. Rutledge, and A. Hajimiri, "Distributed active transformer-A new power-combining and impedance-transformation technique," IEEE Trans. Microw. Theory Tech., vol. 50, no. 1, pp. 316-331, Jan. 2002.
2. I. Aoki, S. D. Kee, D. B. Rutledge, and A. Hajimiri, "Fully integrated CMOS power amplifier design using the distributed active-transformer architecture," IEEE J. Solid-State Circuits, vol. 37, no. 3, pp. 371-383, Mar. 2002.
3. C. Park, Y. Kim, H. Kim, and S. Hong, "A 1.9-GHz CMOS power amplifier using three-port asymmetric transmission line transformer for a polar transmitter," IEEE Trans. Microw. Theory Tech., vol. 55, no. 2, pp. 230-238, Feb. 2007.
4. J. Jang, C. Park, H. Kim, and S. Hong, "A CMOS RF power amplifier using an off-chip transmision line transformer with 62% PAE," IEEE Microw. Wireless Compon. Lett., vol. 17, no. 5, pp. 385-387, May 2007.
5. Y. Kim., B. Ku, C. Park, D. Lee, and S. Hong, "A high dynamic range CMOS RF power amplifier with, a switchable transformer for polar transmitters," in IEEE RFIC Symp. Dig., Jun. 2007, pp. 737-740.
6. C. Park, D. Lee, J. Han, and S. Hong, "Tournament-shaped magnetically coupled power-combiner architecture for RF CMOS power amplifier," IEEE Trans. Microw. Theory Tech., vol. 55, no. 10, pp. 2034-2042, Oct. 2007.
7. J. R. Long, "Monolithic transformers for silicon RF IC design," IEEE J. Solid-State Circuits, vol. 35, no. 9, pp. 1368-1382, Sep. 2000.
8. S. Kim, K. Lee, J. Lee, B. Kim, S. D. Kee, I. Aoki, and D. B. Rutledge, "An optimized design of distributed active transformer," IEEE Trans. Microw. Theory Tech., vol. 53, no. 1, pp. 380-388, Jan. 2005.
9. P. Haldi, D. Chowdhury, P. Reynaert, G. Liu, and A. M. Niknejad, "A 5.8 GHz 1 V linear power amplifier using a novel on-chip transformer power combiner in standard 90 nm CMOS," IEEE J. Solid-State Circuits, vol. 43, no. 5, pp. 1054-1063, May 2008.
10. A. V. Grebennikov and H. Jaeger, "Class E with parallel circuit-A new challenge for high-efficiency RF and microwave power amplifiers," in. IEEE MTT-S Int. Microw. Symp. Dig., Jun. 2002, vol. 3, pp. 1627-1630.
11. K. H. An, O. Lee, H. Kim, D. Lee, J. Han, K. S. Yang, Y. Kim, J. J. Chang, W. Woo, C. H. Lee, H. Kim, and J. Laskar, "Power-combining transformer techniques for fully-integrated CMOS power amplifiers," IEEE J. Solid-State Circuits, vol. 43, no. 5, pp. 1064-1075, May 2008.
12. A. Mazzanti, L. Larcher, R. Brama, and F. Svelto, "Analysis of reliability and power efficiency in cascode class-E PAs," IEEE J. Solid-State Circuits, vol. 41, no. 5, pp. 1222-1229, May 2006.
13. R. Brama, L. Larcher, A. Mazzanti, and F. Svelto, "A 30.5 dBm. 48% PAE CMOS class-E PA with integrated balun for RF applications," IEEE J. Solid-State Circuits, vol. 43, no. 8, pp. 1755-1762, Aug. 2008.
14. International Technology Roadmap for Semiconductors, System Drivers, 2001 ed., 2001.