A 30.5 dBm 48% PAE CMOS class-E PA with integrated balun for RF applications

IEEE Journal of Solid-State Circuits

Volumn 43, Issue 8, 2008, Pages 1755-1762

  Brama, Riccardo ^a   Larcher, Luca ^a   Mazzanti, Andrea ^a   Svelto, Francesco ^b  

^a UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^b UNIVERSITY OF PAVIA   (Italy)

Author keywords

Baluns; Class E; CMOS power amplifiers; Radio frequency (RF) circuits; Switching amplifiers; Wireless communications

Indexed keywords

AUTOMOBILE DRIVERS; BROADBAND AMPLIFIERS; CMOS INTEGRATED CIRCUITS; EXPERIMENTS; PETROLEUM PRODUCTS; SIGNAL PROCESSING; WEIGHT CONTROL;

BALUNS; CASCODE TOPOLOGY; CLASS-E; CMOS POWER AMPLIFIERS; CMOS TECHNOLOGIES; COMMERCIAL PRODUCTS; DRAIN EFFICIENCY; EXTERNAL-; FULLY DIFFERENTIAL; HIGH-EFFICIENCY; INTEGRATED INDUCTORS; LOW LOSSES; LUMPED ELEMENTS; NARROW BANDS; OUTPUT POWERS; POWER EFFICIENCIES; POWER LOSSES; RADIO-FREQUENCY (RF) CIRCUITS; RELIABLE OPERATIONS; RF APPLICATIONS; STILL MISSING; SWITCHING AMPLIFIERS; WIRELESS COMMUNICATIONS;

POWER AMPLIFIERS;

EID: 48849085314     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSSC.2008.925605     Document Type: Conference Paper

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