The annealing product of the silicon vacancy in 6H-SiC

Physica B: Condensed Matter

Volumn 308-310, Issue , 2001, Pages 625-628

  Lingner, Th ^a   Greulich Weber, S ^a   Spaeth, J M ^a   Gerstmann, U ^a   Rauls, E ^a   Overhof, H ^a  

^a UNIVERSITY OF PADERBORN   (Germany)

Author keywords

Antisite; Electron paramagnetic resonance; Silicon carbide; Vacancies

Indexed keywords

ANNEALING; APPROXIMATION THEORY; CRYSTAL DEFECTS; ELECTRON ENERGY LEVELS; ELECTRON TRANSITIONS; MATHEMATICAL MODELS; PARAMAGNETIC RESONANCE; PHOTONS; PROBABILITY DENSITY FUNCTION; RADIATION EFFECTS; SPECTRUM ANALYSIS;

PHOTOEXCITATION;

SILICON CARBIDE;

EID: 0035671615     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(01)00762-1     Document Type: Article

References (9)

1. Structural analysis of point defects in solids