Performance and reliability of a 4Mb Si nanocrystal NOR Flash memory with optimized 1T memory cells

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2008, Pages

  Gerardi, C ^a   Molas, G ^b   Albini, G ^a   Tripiciano, E ^a   MGely, ^b   Emmi, A ^c   Fiore, O ^a   Nowak, E ^b   Mello, D ^c   Vecchio, M ^a   Masarotto, L ^b   Portoghese, R ^a   De Salvo, B ^b   Deleonibus, S ^b   Maurelli, A ^c  

^a Numonyx ^*  (Italy)

^b CEA LETI   (France)

^c STMICROELECTRONICS   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

90 NM TECHNOLOGY NODES; BITCELL; CONTROL DIELECTRICS; COUPLING RATIOS; CYLINDRICAL SYMMETRIES; EMBEDDED MEMORIES; EXCELLENT PERFORMANCE; HIGH POTENTIALS; HIGH TEMPERATURES; MEMORY CELLS; MEMORY PERFORMANCE; NOR FLASH MEMORIES; NOR FLASHES; RELIABILITY CHARACTERISTICS; SI NANOCRYSTALS; SILICON NANOCRYSTALS; TECHNOLOGICAL IMPROVEMENTS;

CHARGE TRAPPING; DATA STORAGE EQUIPMENT; ELECTRON DEVICES; HIGH TEMPERATURE APPLICATIONS; NANOCLUSTERS; NANOCRYSTALS; RELIABILITY; SILICON;

FLASH MEMORY;

EID: 64549125517     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2008.4796823     Document Type: Conference Paper

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