High speed standard cell using bootstrapped technology for LTPS TFT

ISCIT 2007 - 2007 International Symposium on Communications and Information Technologies Proceedings

Volumn , Issue , 2007, Pages 226-229

  Sato, Takafumi ^a   Mizushima, Shigeaki ^b   Imai, Shigeki ^b   Suzuki, Yasoji ^a   Murata, Shinichi ^a  

^a TOKAI UNIVERSITY   (Japan)

^b SHARP CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ADDERS; CAPACITANCE; CAPACITORS; DIELECTRIC DEVICES; ELECTRIC BATTERIES; ELECTRIC EQUIPMENT; ENERGY STORAGE; INFORMATION TECHNOLOGY; LIGHT SOURCES; LIQUID CRYSTAL DISPLAYS; LIQUID CRYSTALS; STANDARDS; TECHNOLOGY; THICK FILMS; THIN FILM DEVICES; THIN FILM TRANSISTORS;

(+ MOD 2N) OPERATION; (OTDR) TECHNOLOGY; FULL ADDER (FA); HIGH SPEEDS; HIGH-FREQUENCY REGION; INTERNATIONAL SYMPOSIUM; LOW TEMPERATURE POLY-SILICON THIN-FILM TRANSISTOR (LTPS-TFT); NON SATURATION; PATTERN SIZES; POWER-DELAY-PRODUCT (PDP); STANDARD CELLS; TFT LCD (CO);

CELLS;

EID: 46749094323     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISCIT.2007.4392018     Document Type: Conference Paper

References (5)

1. H. Haga et al., "510-Kb SOG-DRAM for Frame-Memory-Integrated Displays" IDW/AD '05, pp. 1015-1018, Dec. 2005,
2. Lee, B et al., "A CPU on a glass substrate using CG-silicon TFTs", ISSCC 2003 Digest, pp.164-165, Feb. 2003,
3. Hiroyuki Hara et al, "Thin Film Transistor Standard Cells", IDW '02, pp.287-290, Dec. 2002,
4. Keiko Matsunaga et al., "HIGH SPEED LOGIC CIRCUIT USED BOOTSTRAPPED TECHNOLOGY AND LOW-TEMPERATURE POLY -SILICON TECHNOLOGY FOR TFT-LCD PANEL", The 2004 IEEE APCCAS, pp. 1001 -1004, Dec. 2004,
5. Kazuhide Ishikawa et al., "High-Speed Sequential Logic Circuitry used Low Temperature Poly Silicon Technology for TFT-LCD Panel", IDW/AD '05, pp.1049-1052, Dec. 2005,