Properties of gallium-doped zinc-oxide films deposited by RF or DC magnetron sputtering with various GZO targets

Journal of the Korean Physical Society

Volumn 54, Issue 3, 2009, Pages 1283-1287

  Park, Sang Eun ^a   Lee, Jung Chul ^a   Song, Pung Keun ^a   Lee, Jin Ho ^b  

^a Pusan National University   (South Korea)

^b Samsung Corning Co Ltd   (South Korea)

Author keywords

D.C. Discharge; GZO; Magnetron sputtering; R.F. Discharge; TCO

Indexed keywords

EID: 64549095337     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: 10.3938/jkps.54.1283     Document Type: Article

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