Influence of etching condition on surface morphology of AlN and GaN layers

Physica Status Solidi (A) Applied Research

Volumn 201, Issue 12, 2004, Pages 2755-2759

  Kuwano, N ^a,b   Tajima, R ^b   Bohyama, S ^c   Miyake, H ^c   Hiramatsu, K ^c   Shibata, T ^c,d  

^a Art Science and Technology Center for Cooperative Research   (Japan)

^b KYUSHU UNIVERSITY   (Japan)

^c MIE UNIVERSITY   (Japan)

^d NGK INSULATORS LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATION-DENSITY; PITS; THREADING DISLOCATIONS (TD); WHISKERS; BURGERS VECTORS;

ALUMINUM NITRIDE; CARRIER CONCENTRATION; ETCHING; NITRIDES; SCANNING ELECTRON MICROSCOPY; SURFACES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; GALLIUM NITRIDE; MICROSTRUCTURE; VECTORS;

GALLIUM NITRIDE; REACTIVE ION ETCHING;

EID: 6444223947     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssa.200404984     Document Type: Conference Paper

References (5)

1. K. Kagawa, K. Horibuchi, N. Kuwano, K. Oki, and K. Hiramatsu, Proc. Int. Workshop on Nitride Semiconductor, IPAP Conf. Ser. 1, The Institute of Pure and Applied Physics, (2000), p. 471.
2. N. Kuwano, K. Horibuchi, K. Kagawa, S. Nishimoto, and M. Sueyoshi, J. Crystal Growth 237-239, 1047 (2002).
3. T. Shibata, Y. Kida, H. Miyake, K. Hiramatsu, K. Asai, T. Nagai, S. Sumiya, M. Tanaka, and O. Oda, Mat. Res. Soc. Proc. 63, I3.48 (2002).
4. T. Hino, S. Tomiya, T. Miyajima, K. Yanashima, S. Hashimoto, and M. Ikeda, Appl. Phys. Lett. 76, 3421 (2000).
5. C. Youtsey, I. Adesida, and G. B. Bulman, Appl. Phys. Lett. 73, 797 (1998).