Optical properties of the strained layer superlattices (GaAs) 6/(GaP)m(001) (m=2, 4 and 6)

Materials Science Forum

Volumn 609, Issue , 2009, Pages 41-48

  Hamidani, A ^a   Bennecer, B ^a  

^a UNIVERSITY OF GUELMA   (Algeria)

Author keywords

FP LAPW; III V superlattices; Optical properties

Indexed keywords

CALCULATIONS; III-V SEMICONDUCTORS; LOCAL DENSITY APPROXIMATION; OPTICAL PROPERTIES; SEMICONDUCTING GALLIUM; TENSILE STRAIN;

DIELECTRIC FUNCTIONS; FIRST PRINCIPLE CALCULATIONS; FP-LAPW; FULL POTENTIAL LINEARIZED AUGMENTED PLANE WAVE METHOD; III-V SUPERLATTIX; IMAGINARY PARTS; LOCAL DENSITY-APPROXIMATION; LOCAL-DENSITY APPROXIMATION; OPTICAL BANDS; STRAINED LAYER SUPERLATTICE;

GALLIUM ARSENIDE;

EID: 64349106275     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.609.41     Document Type: Conference Paper

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