A comparative study of the growth mechanism of InAs/GaAs and GaP/GaAs heterostructures and strained layered superlattices by atomic layer epitaxy

Journal of Crystal Growth

Volumn 276, Issue 3-4, 2005, Pages 374-380

  Ozeki, M ^a   Haraguchi, T ^a   Takeuchi, T ^a   Maeda, K ^a  

^a UNIVERSITY OF MIYAZAKI   (Japan)

Author keywords

A1. Growth method; A3. Atomic layer epitaxy; B2. Semiconducting III V materials

Indexed keywords

ATOMIC FORCE MICROSCOPY; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; MORPHOLOGY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH;

ATOMIC LAYER EPITAXY; GAS CYCLE NUMBER; LATTICE MISMATCH; SELF LIMITING MECHANISM;

HETEROJUNCTIONS;

EID: 15344341862     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.11.427     Document Type: Article

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