Chemical and structural contributions to the valence-band offset at GaP/GaAs heterojunctions

Physical Review B - Condensed Matter and Materials Physics

Volumn 54, Issue 8, 1996, Pages 5691-5695

  Di Ventra, M ^a   Peressi, M ^a   Baldereschi, A ^a  

^a UNIVERSITY OF TRIESTE   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0037483853     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.54.5691     Document Type: Article

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