Effect of Tl addition on the electrical properties of amorphous As 20Se80-xTlx films

Physica B: Condensed Matter

Volumn 371, Issue 2, 2006, Pages 218-222

  Dongol, M ^a   El Nahass, M M ^b   Abou Zied, M ^a   El Denglawey, A ^a  

^a SOUTH VALLEY UNIVERSITY   (Egypt)

^b Ain Shams University   (Egypt)

Author keywords

Activation energy; Chalcogenide glasses; DSC; Electrical properties

Indexed keywords

ACTIVATION ENERGY; DIFFERENTIAL SCANNING CALORIMETRY; ELECTRIC PROPERTIES; EVAPORATION; GLASS MANUFACTURE; GLASS TRANSITION; THIN FILMS;

CHALCOGENIDE GLASS; CHALCOGENIDE SEMICONDUCTORS; ELECTRICAL PROPERTIES;

ARSENIC COMPOUNDS;

EID: 30644479188     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2005.09.038     Document Type: Article

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