4H-SiC delta-doped accumulation-channel MOS FET

Materials Science Forum

Volumn 389-393, Issue , 2002, Pages 1077-1080

  Yokogawa, Toshiya ^a   Takahashi, Kunimasa ^a   Kusumoto, Osamu ^a   Uchida, Masao ^a   Yamashita, Kenya ^a   Kitabatake, Makoto ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

CVD; Delta doping; Mobility; MOSFETs

Indexed keywords

CARRIER MOBILITY; CHEMICAL VAPOR DEPOSITION; ELECTRONIC PROPERTIES; MOSFET DEVICES; SURFACE SCATTERING; THRESHOLD VOLTAGE; ELECTRIC POTENTIAL; ELECTRON MOBILITY; SEMICONDUCTOR DOPING; SILICON CARBIDE;

ACCUMULATION CHANNELS; DELTA-DOPING; EFFECTIVE CHANNEL MOBILITIES; HIGH ELECTRON MOBILITY; ITS APPLICATIONS; MOSFETS; NARROW DISTRIBUTION; PEAK CONCENTRATIONS;

SILICON CARBIDE; MOSFET DEVICES;

EID: 0036436432     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.389-393.1077     Document Type: Conference Paper

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