Annealing behavior of defects in multiple-energy nitrogen implanted ZnO bulk single crystal

Materials Science Forum

Volumn 600-603, Issue , 2009, Pages 1361-1364

  Kuriyama, K ^a   Matsumoto, K ^a   Ooi, M ^a   Kushida, K ^b  

^a HOSEI UNIVERSITY   (Japan)

^b Osaka Kyouiku University   (Japan)

Author keywords

Defects; Ion implantation; Nitrogen; Photoluminescence; Rutherford backscattering; Thermally stimulated current; ZnO

Indexed keywords

ANNEALING; BACKSCATTERING; DEFECTS; II-VI SEMICONDUCTORS; ION IMPLANTATION; NITROGEN; PHOTOLUMINESCENCE; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON CARBIDE; THERMOLUMINESCENCE; ZINC OXIDE;

ANNEALING BEHAVIOR; BULK SINGLE CRYSTALS; HYDROTHERMAL METHODS; INTERSTITIAL OXYGEN; NATIVE POINT DEFECTS; NITROGEN ACCEPTORS; RUTHERFORD BACKSCATTERING CHANNELING; THERMALLY STIMULATED CURRENT;

SINGLE CRYSTALS;

EID: 63849265764     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

References (9)

1. K. Maeda, M. Sato, I. Niikura and T. Fukuda, Semicond. Sci. Technol. 20 (2005) S49.
2. F.D. Auret, S.A. Goodman, M.J. Legodi, W.E. Meyer and D.C. Look, Appl. Phys. Lett. 80 (2002) 1340.
3. D.C. Look, C. Coskun, B. Claflin and G.C. Farlow, Physica B, 340-342 (2003) 32.
4. C.H. Park, S.B. Zhang and S-H. Wei, Phys. Rev. B 66 (2002) 073202.
5. M. J. Hollis, Phys. Rev. B 8 (1973) 931.
6. S.B. Zhang, S.-H. Wei and A. Zunger, Phys. Rev. B 63 (2001) 075205.
7. Y. Yang, H. Yan, Z. Fu, B. Yang, L. Xia, Y. Xu, J. Zuo and F. Li, Solid State Commun. 138 (2006) 521.
8. F. Reuss, C. Kirchner, Th. Gruber, R. Kling, S. Maschek, W. Limmer, A. Waag and P. Ziemann, J. Appl. Phys. 95 (2004) 3385.
9. K. Kuriyama, M. Ooi, K. Matsumoto and K. Kushida, Appl. Phys. Lett. 89 (2006) 242113.