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Volumn , Issue , 2007, Pages 281-284
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New improvement results on 7.5 kV 4H-SiC p-IGBTs with Rdiff, on of 26 mω-cm2 at 25°C
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Author keywords
[No Author keywords available]
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Indexed keywords
ELECTRIC CURRENT CONTROL;
ELECTRIC RESISTANCE MEASUREMENT;
ELECTROOXIDATION;
GATE DIELECTRICS;
JUNCTION GATE FIELD EFFECT TRANSISTORS;
THRESHOLD VOLTAGE;
CONDUCTIVITY MODULATION;
CURRENT SUPPRESSING LAYER (CSL);
GATE OXIDATION;
REVERSE BIAS SAFE OPERATING AREA (RBSOA);
INSULATED GATE BIPOLAR TRANSISTORS (IGBT);
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EID: 39749165093
PISSN: 10636854
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1109/ISPSD.2007.4294987 Document Type: Conference Paper |
Times cited : (19)
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References (4)
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