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Volumn , Issue , 2007, Pages 281-284

New improvement results on 7.5 kV 4H-SiC p-IGBTs with Rdiff, on of 26 mω-cm2 at 25°C

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENT CONTROL; ELECTRIC RESISTANCE MEASUREMENT; ELECTROOXIDATION; GATE DIELECTRICS; JUNCTION GATE FIELD EFFECT TRANSISTORS; THRESHOLD VOLTAGE;

EID: 39749165093     PISSN: 10636854     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISPSD.2007.4294987     Document Type: Conference Paper
Times cited : (19)

References (4)
  • 1
    • 0030268828 scopus 로고    scopus 로고
    • Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature application: A review
    • J. B. Casady and R. W. Johnson, "Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature application: A review," Solid-State Electron., vol. 39, pp. 1409-1422, 1996.
    • (1996) Solid-State Electron , vol.39 , pp. 1409-1422
    • Casady, J.B.1    Johnson, R.W.2
  • 2
    • 27744605497 scopus 로고    scopus 로고
    • Q. Zhang, H-R. Chang, M. Gomez, C. Bui, E. Hanna, J. A. Higgins, T. Isaacs-Smith and J. R. Williams: 10kV Trench Gate IGBTs on 4H-SiC, Proceedings of the 18th International Symposium on Power Semiconductor Devices & ICs, May 2326, 2005, p303-306.
    • Q. Zhang, H-R. Chang, M. Gomez, C. Bui, E. Hanna, J. A. Higgins, T. Isaacs-Smith and J. R. Williams: "10kV Trench Gate IGBTs on 4H-SiC," Proceedings of the 18th International Symposium on Power Semiconductor Devices & ICs, May 2326, 2005, p303-306.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.