Synthesis and characterization of bandgap-reduced p-type cu-incorporated ZnO films

Materials Science and Technology Conference and Exhibition, MS and T'08

Volumn 2, Issue , 2008, Pages 901-913

  Ahn, Kwang Soon ^a   Shet, Sudhakar ^a,b   Deutsch, Todd ^a   Yan, Yanfa ^a   Turner, John ^a   Ravindra, N M ^b   Al Jassim, M ^a  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

^b NEW JERSEY INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Bandgap reduction; Cu incorporation; F doped tin oxide; P type ZnO; Post deposition annealing; Sputtering

Indexed keywords

BANDGAP REDUCTION; CU INCORPORATION; F-DOPED TIN OXIDE; P-TYPE ZNO; POST-DEPOSITION ANNEALING;

ANNEALING; CHARACTERIZATION; COPPER OXIDES; ENERGY GAP; GAS ABSORPTION; LIGHT ABSORPTION; MAGNETRON SPUTTERING; METALLIC FILMS; OPTICAL CONDUCTIVITY; OPTICAL FILMS; SEMICONDUCTING ZINC COMPOUNDS; SYNTHESIS (CHEMICAL); THIN FILMS; TIN; TITANIUM COMPOUNDS; ZINC OXIDE;

COPPER;

EID: 63749123898     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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