Excitonic properties of ordered and disordered SiGe nanocrystals

Microelectronics Journal

Volumn 40, Issue 4-5, 2009, Pages 762-765

  de Oliveira, E L ^a   Albuquerque, E L ^a   de Sousa, J S ^b   Farias, G A ^b  

^a FEDERAL UNIVERSITY OF RIO GRANDE DO NORTE   (Brazil)

^b FEDERAL UNIVERSITY OF CEARÁ   (Brazil)

Author keywords

Alloyed nanostructures; Core shell quantum dots; Quantum confinement

Indexed keywords

GERMANIUM; NANOCRYSTALS; QUANTUM CONFINEMENT; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; SILICON;

AB-INITIO CALCULATIONS; ALLOYED NANOSTRUCTURES; CORE-SHELL QUANTUM DOTS; EXCITONIC PROPERTIES; MOLAR FRACTIONS; OPTICAL GAPS; RADIATIVE RECOMBINATIONS; SI/GE; SIGE NANOCRYSTALS; TYPE II;

SHELLS (STRUCTURES);

EID: 63749109403     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2008.11.040     Document Type: Article

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