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Volumn 105, Issue 6, 2009, Pages

Fabrication and characterization of metal-ferroelectric (PbZr 0.6Ti0.4O3) -insulator (La2O 3) -semiconductor capacitors for nonvolatile memory applications

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALED SAMPLES; ANNEALING TEMPERATURES; ENERGY-BAND DIAGRAMS; FERROELECTRIC LAYERS; FLAT-BAND VOLTAGE SHIFTS; INSULATOR LAYERS; LANTHANUM OXIDES; MASS SPECTROSCOPIES; MEMORY WINDOWS; METAL FERROELECTRIC INSULATOR SEMICONDUCTORS; NON-VOLATILE MEMORY APPLICATIONS; OUT DIFFUSIONS; PZT; SEMICONDUCTOR CAPACITORS; THIN-FILM CAPACITORS;

EID: 63749108773     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3055415     Document Type: Article
Times cited : (25)

References (16)
  • 3
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    • S. Xiong and S. Sakai, Appl. Phys. Lett. 0003-6951 10.1063/1.124771 75, 1613 (1999).
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    • Xiong, S.1    Sakai, S.2
  • 5
    • 63749096571 scopus 로고    scopus 로고
    • Proceedings of the 12th IEEE International Symposium, ISAF, (unpublished), Vol..
    • J. D. Park, J. W. Kim, and T. S. Oh, Proceedings of the 12th IEEE International Symposium, ISAF, 2000 (unpublished), Vol. 637.
    • (2000) , vol.637
    • Park, J.D.1    Kim, J.W.2    Oh, T.S.3
  • 11
    • 63749085887 scopus 로고    scopus 로고
    • Ph.D. thesis, Tsing-Hua University.
    • P. C. Juan, Ph.D. thesis, Tsing-Hua University, 2005.
    • (2005)
    • Juan, P.C.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.