![]() |
Volumn 105, Issue 6, 2009, Pages
|
Fabrication and characterization of metal-ferroelectric (PbZr 0.6Ti0.4O3) -insulator (La2O 3) -semiconductor capacitors for nonvolatile memory applications
|
Author keywords
[No Author keywords available]
|
Indexed keywords
ANNEALED SAMPLES;
ANNEALING TEMPERATURES;
ENERGY-BAND DIAGRAMS;
FERROELECTRIC LAYERS;
FLAT-BAND VOLTAGE SHIFTS;
INSULATOR LAYERS;
LANTHANUM OXIDES;
MASS SPECTROSCOPIES;
MEMORY WINDOWS;
METAL FERROELECTRIC INSULATOR SEMICONDUCTORS;
NON-VOLATILE MEMORY APPLICATIONS;
OUT DIFFUSIONS;
PZT;
SEMICONDUCTOR CAPACITORS;
THIN-FILM CAPACITORS;
ANNEALING;
CAPACITANCE;
CAPACITORS;
ELECTRIC CONDUCTIVITY;
FERROELECTRICITY;
LANTHANUM;
LEAD;
MASS SPECTROMETRY;
PIEZOELECTRIC ACTUATORS;
PIEZOELECTRIC MATERIALS;
PIEZOELECTRIC TRANSDUCERS;
SEMICONDUCTING LEAD COMPOUNDS;
SEMICONDUCTING SILICON COMPOUNDS;
THIN FILM CIRCUITS;
WINDOWS;
ZIRCONIUM;
DATA STORAGE EQUIPMENT;
|
EID: 63749108773
PISSN: 00218979
EISSN: None
Source Type: Journal
DOI: 10.1063/1.3055415 Document Type: Article |
Times cited : (25)
|
References (16)
|