Fabrication and characterization of metal-ferroelectric (PbZr 0.6Ti0.4O3) -insulator (La2O 3) -semiconductor capacitors for nonvolatile memory applications

Journal of Applied Physics

Volumn 105, Issue 6, 2009, Pages

  Juan, Trevor Pi Chun ^a   Lin, Cheng Li ^b   Shih, Wen Chieh ^c   Yang, Chin Chieh ^c   Lee, Joseph Ya Min ^c   Shye, Der Chi ^a   Lu, Jong Hong ^a  

^a MING CHI UNIVERSITY OF TECHNOLOGY   (Taiwan)

^b FENG CHIA UNIVERSITY   (Taiwan)

^c NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALED SAMPLES; ANNEALING TEMPERATURES; ENERGY-BAND DIAGRAMS; FERROELECTRIC LAYERS; FLAT-BAND VOLTAGE SHIFTS; INSULATOR LAYERS; LANTHANUM OXIDES; MASS SPECTROSCOPIES; MEMORY WINDOWS; METAL FERROELECTRIC INSULATOR SEMICONDUCTORS; NON-VOLATILE MEMORY APPLICATIONS; OUT DIFFUSIONS; PZT; SEMICONDUCTOR CAPACITORS; THIN-FILM CAPACITORS;

ANNEALING; CAPACITANCE; CAPACITORS; ELECTRIC CONDUCTIVITY; FERROELECTRICITY; LANTHANUM; LEAD; MASS SPECTROMETRY; PIEZOELECTRIC ACTUATORS; PIEZOELECTRIC MATERIALS; PIEZOELECTRIC TRANSDUCERS; SEMICONDUCTING LEAD COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; THIN FILM CIRCUITS; WINDOWS; ZIRCONIUM;

DATA STORAGE EQUIPMENT;

EID: 63749108773     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3055415     Document Type: Article

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