Highly reliable high speed 1.1 μm-InGaAs/GaAsP-VCSELs

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7229, Issue , 2009, Pages

  Hatakeyama, H ^a   Anan, T ^a   Akagawa, T ^a   Fukatsu, K ^a   Suzuki, N ^a   Tokutome, K ^a   Tsuji, M ^a  

^a NEC CORPORATION   (Japan)

Author keywords

Failure analysis; High temperature operation; InGaAs GaAsP MQWs; Optical interconnections; Reliability; VCSELs

Indexed keywords

10-GBIT/S; ACCELERATED LIFE TESTS; ACTIVE LAYERS; AMBIENT TEMPERATURES; CURRENT APERTURES; DARK-LINES; DBR LAYERS; ERROR-FREE OPERATIONS; HIGH TEMPERATURE OPERATION; HIGH-SPEED; INGAAS/GAASP-MQWS; MULTIPLE QUANTUM WELLS; OPTICAL INTERCONNECTIONS; STRAIN-COMPENSATED; VCSELS; VERTICAL CAVITY SURFACE-EMITTING LASERS;

DC-DC CONVERTERS; HIGH PERFORMANCE LIQUID CHROMATOGRAPHY; HIGH TEMPERATURE APPLICATIONS; HIGH TEMPERATURE OPERATIONS; LASERS; OPTICAL INTERCONNECTS; QUALITY ASSURANCE; QUANTUM WELL LASERS; RELIABILITY ANALYSIS; SAFETY FACTOR; SEMICONDUCTOR QUANTUM WELLS; SURFACE EMITTING LASERS; TESTING;

FAILURE ANALYSIS;

EID: 63449112635     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.808717     Document Type: Conference Paper

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