Large aperture 850 nm VCSEL operating at 28 Gbit/s

Conference Digest - IEEE International Semiconductor Laser Conference

Volumn , Issue , 2008, Pages 7-8

  Westbergh, P ^a   Gustavsson, J S ^a   Haglund, A ^a   Larsson, A ^a  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY; HETEROJUNCTIONS; LASERS; MODULATION; SEMICONDUCTOR MATERIALS; SURFACE EMITTING LASERS;

LARGE APERTURES; MODULATION BANDWIDTHS; SIGNAL MODULATIONS;

SEMICONDUCTOR LASERS;

EID: 56749106167     PISSN: 08999406     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISLC.2008.4635982     Document Type: Conference Paper

References (4)

1. T. Anan et al., OFC, OThS5, Feb. 2008.
2. Y.-C. Chang et al., IEE Electronics Letters, vol. 43, no. 19, Sept. 2007.
3. K. L. Lear et al., OSA TOPS, vol. 15, pp. 69-74, 1997.
4. D. M. Kuchta et al., IEEE LEOS Summer Topical Meetings, pp. 49-50, 2001.