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Volumn 82, Issue 2, 2008, Pages 100-105
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Electron properties of n- and p-CuInSe2
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Author keywords
CuInSe2 monocrystals; Directed crystallization; Impurity levels; Mobility; Scattering mechanisms
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Indexed keywords
CONDUCTION BANDS;
CRYSTALLIZATION;
HALL EFFECT;
HEAT CONVECTION;
IMPURITIES;
STOICHIOMETRY;
THERMAL GRADIENTS;
VALENCE BANDS;
DIRECTED CRYSTALLIZATION;
IMPURITY LEVELS;
SCATTERING MECHANISMS;
COPPER COMPOUNDS;
CONDUCTION BANDS;
COPPER COMPOUNDS;
CRYSTALLIZATION;
HALL EFFECT;
HEAT CONVECTION;
IMPURITIES;
STOICHIOMETRY;
THERMAL GRADIENTS;
VALENCE BANDS;
CRYSTALLIZATION;
ELECTRICAL PROPERTY;
ELECTRON;
TEMPERATURE GRADIENT;
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EID: 38349190230
PISSN: 0038092X
EISSN: None
Source Type: Journal
DOI: 10.1016/j.solener.2007.07.004 Document Type: Article |
Times cited : (19)
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References (24)
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