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Volumn 6, Issue 1, 2009, Pages 307-310
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Dynamics of photo-excited carriers on GaAs(100) surface studied by ultrafast time-resolved photoemission
a
SAGA UNIVERSITY
(Japan)
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Author keywords
[No Author keywords available]
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Indexed keywords
BAND-BENDING;
DECAY COMPONENTS;
DIE SURFACES;
DOPANT LEVELS;
ELECTRON THERMALIZATION;
GAAS(1 0 0);
PHOTO-EXCITED CARRIERS;
PICOSECOND;
PUMP POWER;
RELAXATION MODELS;
SAMPLE TEMPERATURES;
SURFACE POTENTIAL BARRIERS;
TIME-RESOLVED;
TIME-RESOLVED PHOTOEMISSIONS;
TIME-SCALE;
ULTRA FASTS;
ATOMIC SPECTROSCOPY;
DYNAMICS;
EMISSION SPECTROSCOPY;
GALLIUM ALLOYS;
MOLECULAR SPECTROSCOPY;
NUCLEAR PHYSICS;
SEMICONDUCTING GALLIUM;
SOLIDS;
SURFACE POTENTIAL;
SURFACE PROPERTIES;
SURFACE RELAXATION;
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EID: 63449098345
PISSN: 18626351
EISSN: None
Source Type: Journal
DOI: 10.1002/pssc.200879809 Document Type: Conference Paper |
Times cited : (9)
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References (15)
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