Erbium containing ZnO prepared by ion beam sputtering deposition and thermal annealing mixing

Applied Surface Science

Volumn 255, Issue 13-14, 2009, Pages 6525-6528

  Chao, Liang Chiun ^a   Chang, Chung Wen ^a   Tsai, Dong Yi ^a  

^a NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

Defects; Photoelectron spectroscopy; Sputtering; ZnO

Indexed keywords

ANNEALING; DEFECTS; ENERGY TRANSFER; ERBIUM; II-VI SEMICONDUCTORS; IONS; LASER EXCITATION; MIXING; PHOTOELECTRON SPECTROSCOPY; SPUTTERING; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDE;

DEEP LEVEL EMISSION; DIFFRACTION PEAKS; ION BEAM SPUTTERING DEPOSITION; OPTIMIZED ANNEALING CONDITIONS; PHOTOLUMINESCENCE ANALYSIS; SILICON SUBSTRATES; THERMAL-ANNEALING; VARIABLE TEMPERATURE;

ION BEAMS;

EID: 63449094726     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2009.02.045     Document Type: Article

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