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Volumn 7231, Issue , 2009, Pages

Effect of UV irradiation on the apoptosis and necrosis of Jurkat cells using UV LED

Author keywords

Apoptosis; Dermatology; Jurkat cell; Necrosis; UV LED

Indexed keywords

APOPTOSIS; APOPTOTIC; FLUORESCENT LIGHT BULBS; GROUP-III NITRIDES; HIGH ELECTRICAL POWER; JURKAT CELL; LAMP SYSTEMS; LIGHT EMITTING DIODE LEDS; LOW-POWER; NECROSIS; NECROTIC CELLS; PHOTOTHERAPY; SKIN DISEASE; TUMOR CELLS; UV IRRADIATIONS; UV LED; UV LIGHTS;

EID: 63449088193     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.809929     Document Type: Conference Paper
Times cited : (5)

References (11)
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    • (2001) J Am Acad Dermatol , vol.44 , pp. 999-1003
    • Scherschun, L.1    Kim, J.J.2    Lim, H.W.3
  • 5
    • 0003123285 scopus 로고    scopus 로고
    • High-dose UVA1 for urticaria pigmentosa
    • Stege, H., Schöpf, E. and Ruzicka, T., "High-dose UVA1 for urticaria pigmentosa," Lancet, 64, 347 (1996).
    • (1996) Lancet , vol.64 , pp. 347
    • Stege, H.1    Schöpf, E.2    Ruzicka, T.3
  • 6
    • 63449117111 scopus 로고    scopus 로고
    • Kunihiko, T. and Tetsuo, S., [Skin Immunity Handbook Second Revision Edition], Chuugai Medicine Co., Shinjyuku, Tokyo, 379-382 (2005).
    • Kunihiko, T. and Tetsuo, S., [Skin Immunity Handbook Second Revision Edition], Chuugai Medicine Co., Shinjyuku, Tokyo, 379-382 (2005).
  • 9
    • 34347380453 scopus 로고    scopus 로고
    • Breakthroughs in improving crystal quality of GaN and invention of the p-n junction blue-light-emitting diode
    • Isamu, A., and Hiroshi, A., "Breakthroughs in improving crystal quality of GaN and invention of the p-n junction blue-light-emitting diode," Jpn. J. Appl. Phys. 45, No. 12, 9001-9010 (2006).
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    • Isamu, A.1    Hiroshi, A.2
  • 10
    • 34548013533 scopus 로고    scopus 로고
    • 231 -261 nm AlGaN deep-ultraviolet light-emitting diodes frabricated on A1N multilayer buffers grown by ammonia pulse-flow method on sapphire
    • Hideki, H., Tohru, Y., Norimichi, N., Tomoaki, O. and Norihiro, K., "231 -261 nm AlGaN deep-ultraviolet light-emitting diodes frabricated on A1N multilayer buffers grown by ammonia pulse-flow method on sapphire," Appl. Phys. Lett. 91, 07 1901 (2007).
    • (2007) Appl. Phys. Lett , vol.91 , pp. 07-1901
    • Hideki, H.1    Tohru, Y.2    Norimichi, N.3    Tomoaki, O.4    Norihiro, K.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.