Temperature dependence of photoluminescence intensity from AIGaInP/GaInP-quantum well structures

Journal of Applied Physics

Volumn 82, Issue 3, 1997, Pages 1336-1344

  Ishitani, Yoshihiro ^a,b   Minagawa, Shigekazu ^a   Hamada, Hiroshi ^a   Tanaka, Toshiaki ^a  

^a HITACHI LTD   (Japan)

^b HIROSHIMA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0039017401     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.365907     Document Type: Article

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