Unified length-/width-dependent threshold voltage model with reverse short-channel and inverse narrow-width effects

2003 Nanotechnology Conference and Trade Show - Nanotech 2003

Volumn 2, Issue , 2003, Pages 338-341

  Chiah, Siau Ben ^a   Zhou, Xing ^a   Lim, Khee Yong ^a,b  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

Author keywords

Compact model; Deep submicron mosfet; Inverse narrow width effect; Reverse short channel effect; Threshold voltage

Indexed keywords

COMPACT MODELS; DEEP-SUBMICRON MOSFET; INVERSE NARROW-WIDTH EFFECTS; SHORT-CHANNEL EFFECTS;

BOUNDARY CONDITIONS; CAPACITANCE; MATHEMATICAL MODELS; MOSFET DEVICES; SEMICONDUCTOR DOPING; SILICON WAFERS; TRANSISTORS;

THRESHOLD VOLTAGE;

EID: 6344280061     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. L. A. Akers, IEEE Electron Device Lett., vol. EDL-7, pp. 419-421, 1986.
2. K. K.-L. Hsueh, J. L. Sanchez, T. A. Demassa, and L. A. Akers, IEEE Trans. Electron Devices, vol. 35, pp. 325-338, 1988.
3. K. Ohe, S. Odanaka, K. Moriyama, T. Hori, and G. Fuse, IEEE Trans. Electron Devices, vol. 36, pp. 1110-1116, 1989.
4. S. B. Chiah, X. Zhou, K. Y. Lim, Y. Wang, A. See, and L. Chan, Proc. MSM2001, Hilton Head Island, 2001, pp. 486-489.
5. S. B. Chiah, X. Zhou, K. Y. Lim, A. See, and L. Chan, Proc. MSM2002, San Juan, 2002, pp. 750-753.
6. X. Zhou, S. B. Chiah, K. Y. Lim, Y. Wang, X. Yu, S. Chwa, A. See, and L. Chan, Proc. ICSICT-2001, Shanghai, 2001, pp. 855-860.
7. S. B. Chiah, X. Zhou, and K. Y. Lim, to appear in Proc. MSM2003, San Francisco, 2003.