Semi-empirical approach to modeling reverse short-channel effect in submicron MOSFET's

2001 International Conference on Modeling and Simulation of Microsystems - MSM 2001

Volumn , Issue , 2001, Pages 486-489

  Chiah, Siau Ben ^a   Zhou, Xing ^a   Lim, Khee Yong ^b   Wang, Yuwen ^a   See, Alex ^b   Chant, Lap ^b  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

Author keywords

Effective channel doping; Pile up charge centroid; Reverse short channel effect; Submicron mosfet

Indexed keywords

EFFECTIVE CHANNEL; PILE-UP CHARGE CENTROID; REVERSE SHORT-CHANNEL EFFECT; SUBMICRON MOSFET;

DOPING (ADDITIVES); INTEGRAL EQUATIONS; METALLURGY; PARAMETER ESTIMATION; THRESHOLD VOLTAGE;

MOSFET DEVICES;

EID: 6344226889     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. M. Nishida and H. Onodera, "An Anomalous Increase of Threshold Voltages with Shortening the Channel Lengths for Deeply Boron-Implanted n-Channel MOSFET's," IEEE Tran. Electron Devices, vol. ED-28, pp. 1101-1103, 1981.
2. C. Machala, R. Wise, D. Mercer, and A. Chatterjee, Proc. SISPAD'97, 1997, pp. 141-143.
3. T. Hori, "0.lμm CMOS Technology with Tilt-Implanted Punchthrough Stopper (TIPS)," IEDM Tech. Dig., 1994, p. 75.
4. K. Y. Lim, X. Zhou, and Y. Wang, "Modeling of Threshold Voltage with Reverse Short Channel Effect," Proc. MSM2000, San Diego, CA, Mar. 2000, pp. 317-320.
5. X. Zhou and K. Y. Lim, "Unified MOSFET Compact 1-V Model Formulation Through Physics-Based Effective Transformation," to appear in IEEE Trans. Electron Devices.
6. Z.-H. Liu, C. Hu, J.-H. Huang, T.-Y. Chan, M.-C. Jeng, P. K. Ko, and Y. C. Cheng, "Threshold Voltage Model for Deep-Submicrometer MOSFET's," IEEE Trans. Electron Devices, vol. 40, pp. 86-94, Jan. 1993.