메뉴 건너뛰기




Volumn 2, Issue , 2003, Pages 186-189

Strain effect on the final state density-of-state for hole scattering in silicon

Author keywords

Density of state; Final state; Hole scattering; Silicon; Strain

Indexed keywords

CHARGE CARRIERS; CHARGE TRANSFER; COMPUTER SIMULATION; ELECTRONIC DENSITY OF STATES; HOLE MOBILITY; MATHEMATICAL MODELS; PHONONS; STRAIN;

EID: 6344276904     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (5)

References (8)
  • 3
    • 6344230938 scopus 로고
    • Change of the density-of-state effective mass of holes in germanium induced by [111] and [100] one-dimensional strain and by [111] and [100] uniaxial stress
    • Carl L. Julian and F. O. Lane,Jr "Change of the Density-of-State Effective Mass of Holes in Germanium Induced by [111] and [100] One-Dimensional Strain and by [111] and [100] Uniaxial Stress," Phys. Rev. B7(2), 723(1973).
    • (1973) Phys. Rev. , vol.B7 , Issue.2 , pp. 723
    • Julian, C.L.1    Lane Jr., F.O.2
  • 7
    • 0033904357 scopus 로고    scopus 로고
    • Explaining the dependences of the hole electron mobilities in Si inversiton layers
    • A. Pirovano, A. Lacita, G. Zandler and R. Oberhuber, "Explaining the Dependences of the Hole Electron Mobilities in Si Inversiton Layers," IEEE Trans. Electron Devices 46, 718, 2000.
    • (2000) IEEE Trans. Electron Devices , vol.46 , pp. 718
    • Pirovano, A.1    Lacita, A.2    Zandler, G.3    Oberhuber, R.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.