Large area multi-zone type VHF-PCVD system for a-Si and μc-Si deposition

Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion

Volumn B, Issue , 2003, Pages 1792-1795

  Takagi, Tomoko ^a   Ueda, Masashi ^a   Ito, Norikazu ^a   Watabe, Yoshimi ^a  

^a IHI CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANTENNA-TYPE ELECTRODES; COAXIAL FEED; EXCITATION FREQUENCY; METAL PIPE;

DEPOSITION; ELECTRODES; FREQUENCIES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR DOPING; SUBSTRATES; THIN FILMS;

SILICON;

EID: 6344240997     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. th IEEE Photovoltaic Specialists Conference, 1428, (2000)
2. H. Curtins, N. Wyrsch, M. Favre, and A. V. Shah, "Influence of Plasma Excitation Frequency for a-Si:H thin film deposition", Plasma Chem. and Plasma Processing 7, 267 (1987)
3. 2) VHF-GD Reactor", Mat. Res. Soc. Symp. Proc. 557, 121 (1999)
4. th IEEE Photovoltaic Specialists Conference, 900, (2000)
5. 2 Bond on the Light-Induced Effect in a-Si Films and s-Si Soalr Cells", Jpn. J. Appl. Phys. 28 (10), 1762 (1989)