In situ measurements of etching species in SF6 microwave downstream plasma by ion attachment mass spectroscopy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 8 A, 2004, Pages 5540-5544

  Fujiwara, Kazuya ^a   Shindo, Haruo ^a  

^a TOKAI UNIVERSITY   (Japan)

Author keywords

Etching species; Ion attachment mass spectroscopy; SF 6 downstream plasma; Silicon etching; Silicon wafer global planarization

Indexed keywords

DRY ETCHING; ELECTROMAGNETIC WAVES; HYDROGENATION; IONIZATION; LITHOGRAPHY; MASS SPECTROMETERS; MICROELECTRONICS; SILICON WAFERS; ULSI CIRCUITS; X RAY PHOTOELECTRON SPECTROSCOPY;

ETCHING CHAMBER; ION ATTACHMENT MASS SPECTROSCOPY (IAMS); KANIGEN METHODS; PLANARIZATION;

PLASMAS;

EID: 6344240852     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.5540     Document Type: Article

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