Numerically controlled dry etching technology for flattening of Si wafer which employs SF6/H2 downstream plasma

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 5 A, 2002, Pages 2791-2795

  Yanagisawa, Michihiko ^a   Iida, Shinya ^a   Horiike, Yasuhiro ^a,b  

^a UNIVERSITY OF TOKYO   (Japan)

^b Speedfam Co Ltd   (Japan)

Author keywords

Flattening; Fluorine atoms; Local etching; NC LDE; Numerical control; SF6; Si wafer

Indexed keywords

CRYSTAL DEFECTS; SEMICONDUCTOR PLASMAS; SILICON WAFERS; THICKNESS MEASUREMENT; ULSI CIRCUITS;

DOWNSTREAM PLASMAS;

DRY ETCHING;

EID: 0036578220     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.2791     Document Type: Article

References (5)

1. Semiconductor silicon 1977