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Volumn A, Issue , 2003, Pages 892-895

InGaAs series-connected, tandem, MIM TPV converters

Author keywords

[No Author keywords available]

Indexed keywords

CELL TEMPERATURE; CHEMICAL PROCESSING; ILLUMINATION SOURCE; THERMOPHOTOVOLTAIC (TPV) TANDEM CONVERTERS;

EID: 6344228317     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (12)

References (13)
  • 1
    • 6344281442 scopus 로고    scopus 로고
    • MIMs for thermophotovoltaic energy conversion
    • D. Wilt, et. al., "MIMs for thermophotovoltaic energy conversion", Semicond. Sci. Technol. 18, 2003.
    • (2003) Semicond. Sci. Technol. , vol.18
    • Wilt, D.1
  • 2
    • 0041356110 scopus 로고    scopus 로고
    • 20% efficient InGaAs/InPAs thermophotovoltaic cells
    • th TPV Conf., AIP 653, 2002, pp. 414-423.
    • (2002) th TPV Conf., AIP , vol.653 , pp. 414-423
    • Siergiej, R.1
  • 3
    • 84862451331 scopus 로고    scopus 로고
    • "Low Bandgap Double Heterostructure InAsP/GaInAs Photovoltaic Converters," U. S. Patent number 6,300,557 B1, issued 10/9/01
    • M. Wanlass, "Low Bandgap Double Heterostructure InAsP/GaInAs Photovoltaic Converters," U. S. Patent number 6,300,557 B1, issued 10/9/01.
    • Wanlass, M.1
  • 4
    • 0036948695 scopus 로고    scopus 로고
    • 0.74/0.55 eV GaInAs/InAsP monolithic, tandem, MIM TPV converters
    • th IEEE PVSC, 2002, pp. 884-887.
    • (2002) th IEEE PVSC , pp. 884-887
    • Wehrer, R.1
  • 5
    • 0012578108 scopus 로고    scopus 로고
    • 1-xAs Alloys Used in Thermophotovoltaic Converters
    • AIP
    • 1-xAs Alloys Used in Thermophotovoltaic Converters," Proc. 4th NREL TPV Conf., AIP 460, 1998, pp. 282-288.
    • (1998) Proc. 4th NREL TPV Conf. , vol.460 , pp. 282-288
    • Ahrenkiel, R.1
  • 6
    • 84862441693 scopus 로고    scopus 로고
    • "Using a Critical Composition Grading Technique to Deposit InGaAs Epitaxial Layers on InP Substrates," U.S. Patent number 6,482,672, issued 11/19/02
    • R. Hoffman, Jr. and D. Wilt, "Using a Critical Composition Grading Technique to Deposit InGaAs Epitaxial Layers on InP Substrates," U.S. Patent number 6,482,672, issued 11/19/02.
    • Hoffman Jr., R.1    Wilt, D.2
  • 7
    • 84862451332 scopus 로고    scopus 로고
    • "Low-bandgap, monolithic, multi-bandgap, optoelectronic devices", Patent pending
    • M. Wanlass, et. al. "Low-bandgap, monolithic, multi-bandgap, optoelectronic devices", Patent pending.
    • Wanlass, M.1
  • 8
    • 0012522580 scopus 로고
    • Concentrators, concentrator systems, and photoelectrochemical cells
    • Academic Press, Inc., San Diego
    • A. Fahrenbruch and R. Bube, "Concentrators, Concentrator Systems, and Photoelectrochemical Cells," in Fundamentals of Solar Cells, Academic Press, Inc., San Diego, 1983, pp. 520-526.
    • (1983) Fundamentals of Solar Cells , pp. 520-526
    • Fahrenbruch, A.1    Bube, R.2
  • 9
    • 0012618278 scopus 로고    scopus 로고
    • 0.68 thermophotovoltaic converters and monolithic interconnected modules
    • AIP
    • th NREL TPV Conf., AIP 460, 1998, pp. 132-139.
    • (1998) th NREL TPV Conf. , vol.460 , pp. 132-139
    • Wanlass, M.1
  • 10
    • 84862442425 scopus 로고    scopus 로고
    • 0.55 eV n/p/n MIM TPV cell development
    • Anchorage, AK, September 15-22
    • th IEEE PVSC, Anchorage, AK, September 15-22, 2000, pp. 1024-1027.
    • (2000) th IEEE PVSC , pp. 1024-1027
    • Wilt, D.1
  • 11
    • 0012520309 scopus 로고    scopus 로고
    • Materials and process development for the MIM InGaAs/InP TPV devices
    • AIP
    • N. Fatemi, et al., "Materials and Process Development for the MIM InGaAs/InP TPV Devices," Proc. 3rd NREL TPV Conf., AIP 401, 1997, pp. 249-262.
    • (1997) Proc. 3rd NREL TPV Conf. , vol.401 , pp. 249-262
    • Fatemi, N.1
  • 12
    • 0038728193 scopus 로고    scopus 로고
    • TPV efficiency predictions and measurements for a closed cavity geometry
    • AIP
    • C. Gethers, et al., "TPV Efficiency Predictions and Measurements for a Closed Cavity Geometry," Proc. 3rd NREL TPV Conf., AIP 401, 1997, pp. 471-486.
    • (1997) Proc. 3rd NREL TPV Conf. , vol.401 , pp. 471-486
    • Gethers, C.1
  • 13
    • 18644382453 scopus 로고    scopus 로고
    • Effective electron mass and plasma filter characterization of n-type InGaAs and InAsP
    • W. Metzger, et. al., "Effective electron mass and plasma filter characterization of n-type InGaAs and InAsP", J. Appl. Phys. 92, 2002, pp. 3524-3529.
    • (2002) J. Appl. Phys. , vol.92 , pp. 3524-3529
    • Metzger, W.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.