0.55 eV n/p/n MIM TPV cell development

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn 2000-January, Issue , 2000, Pages 1024-1027

  Wilt, David M ^a   Clark, Eric B ^a   Clevenger, Marvin B ^b,c   Murray, Christopher S ^b,d   Wehrer, Rebecca J ^b  

^a NASA GLENN RESEARCH CENTER   (United States)

^b BECHTEL BETTIS INC   (United States)

^c Molecular Electronics Corporation   (United States)

^d Emcore Photovoltaics   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BUFFER LAYERS; ENERGY GAP; TEMPERATURE;

CELL DEVELOPMENT; DEVICE PERFORMANCE; INTERCONNECTED MODULES; LATTICE-MISMATCHED; LOW BANDGAP; LOW TEMPERATURES; PHOTOVOLTAIC CONVERTER; SPECTRAL CONTROL;

MIM DEVICES;

EID: 84862442425     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2000.916060     Document Type: Conference Paper

References (6)

1. st NREL TPV Conf., pp 210, AIP 321, 1994.
2. th NREL TPV Conf., pp 152, AIP 460, 1998.
3. th NREL TPV Conf., pp 161, AIP 460, 1998.
4. st World Conf. On PV Energy Conversion, pp 1738, 1994.
5. V. Krishnamoorthy et al., Application of critical composition difference concept to the growth of low dislocation density InGaAs on GaAs, J. Appl. Phys., 72 (1992) pp 1752.
6. M.M. Faktor, et al, The characterization of semiconductor materials and structures using electrochemical techniques, Current Topics in Mat'l Sci., Vol. 6, pp. 69-83, 1980.