Coexistence of ferromagnetism and quantum Hall effect in Mn modulation-doped two-dimensional hole systems

Journal of Crystal Growth

Volumn 311, Issue 7, 2009, Pages 2160-2162

  Wurstbauer, U ^a,b   Soda, M ^a   Jakiela, R ^c   Schuh, D ^a   Weiss, D ^a   Zweck, J ^a   Wegscheider, W ^a  

^a UNIVERSITY OF REGENSBURG   (Germany)

^b UNIVERSITY OF HAMBURG   (Germany)

^c INSTITUTE OF PHYSICS   (Poland)

Author keywords

A1. Low dimensional structures; A3. Quantum wells; B1. Arsenates; B2. Magnetic materials; B2. Semiconducting III V materials

Indexed keywords

BUFFER LAYERS; CRYSTALS; DOPING (ADDITIVES); FERROMAGNETISM; GALLIUM ALLOYS; GYRATORS; HALL EFFECT; HALL EFFECT DEVICES; INDIUM ARSENIDE; MAGNETIC MATERIALS; MANGANESE; MANGANESE COMPOUNDS; MODULATION; MOLECULAR DYNAMICS; QUANTUM THEORY; SEMICONDUCTING INDIUM; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR QUANTUM WIRES; SHUBNIKOV-DE HAAS EFFECT; WELLS;

A1. LOW-DIMENSIONAL STRUCTURES; A3. QUANTUM WELLS; B1. ARSENATES; B2. MAGNETIC MATERIALS; B2. SEMICONDUCTING III-V MATERIALS;

MAGNETIC FIELD EFFECTS;

EID: 63349112347     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.10.004     Document Type: Article

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