Local structures around Er atoms doped in GaAs by low-temperature molecular beam epitaxy

Materials Science in Semiconductor Processing

Volumn 6, Issue 5-6, 2003, Pages 425-427

  Ogawa, K ^a   Ofuchi, H ^a   Maki, H ^a   Sonoyama, T ^a   Inoue, D ^a   Tabuchi, M ^a   Takeda, Y ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

Erbium; EXAFS; III V semiconductors; Local structures; Optical properties; Rare earth

Indexed keywords

ABSORPTION; CRYSTALS; DOPING (ADDITIVES); ERBIUM; FLUORESCENCE; FOURIER TRANSFORMS; MOLECULAR BEAM EPITAXY; ORGANOMETALLICS; PERTURBATION TECHNIQUES; PHOTOLUMINESCENCE; SECONDARY ION MASS SPECTROMETRY; X RAY ANALYSIS;

III-V SEMICONDUCTORS; LOCAL STRUCTURES; RARE EARTH; X-RAY ABSORPTION FINE STRUCTURE (EXAFS);

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 1642634090     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2003.05.007     Document Type: Article

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