Assessment of novel phase change memory programming techniques

2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC

Volumn , Issue , 2008, Pages

  Liao, Yi Bo ^a   Lin, Jun Tin ^b   Chiang, Meng Hsueh ^b   Hsu, Wei Chou ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b NATIONAL ILAN UNIVERSITY   (Taiwan)

Author keywords

Non volatile memory; Phase change memory

Indexed keywords

SOLID STATE DEVICES;

BINARY DATUM; CURRENT LEVELS; CURRENT PULSE; FIXED FREQUENCIES; LOW-POWER OPERATIONS; MEMORY CELLS; NON-VOLATILE MEMORY; PROGRAMMING TECHNIQUES; PULSE MAGNITUDES; WRITE OPERATIONS;

PHASE CHANGE MEMORY;

EID: 63249119561     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EDSSC.2008.4760662     Document Type: Conference Paper

References (4)

1. D.Ielmini, A. L. Lacaita, A. Pirovano, F. Pellizzer, and R. Bez, "Analysis of phase distribution in phase-change nonvolatile memories," IEEE Electron Device Letters, vol. 25, pp. 507-509, Jul. 2004.
2. Y.-B. Liao, Y.-K. Chen, and M.-H. Chiang, "An analytical compact PCM model accounting for partial crystallization," in Proc. IEEE Electron Devices and Solid-State Circuit Conf., Dec. 2007, pp. 625-628.
3. Ovonyx Inc., Technical presentation titled "Ovonic Unified Memory," Dec. 1999. [Online]. Available: http://www.ovonyx,com/technology. pdf
4. Y.-B. Liao, J.-T. Lin, and M.-H. Chiang, "Temperature-based phase change memory model for pulsing scheme assessment," in Proc. IEEE International Conf. on Integrated Circuit Design and Technology, Jun. 2008, pp. 199-202.