An analytical compact PCM model accounting for partial crystallization

IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007

Volumn , Issue , 2007, Pages 625-628

  Liao, Yi Bo ^a   Chen, Yan Kai ^a   Chiang, Meng Hsueh ^a  

^a NATIONAL ILAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STATUS TRANSITIONS; RESET STATUSES; UNCERTAIN RESISTANCE;

CIRCUIT SIMULATION; CRYSTALLINE MATERIALS; CRYSTALLIZATION; ELECTRIC RESISTANCE; SPICE;

PHASE CHANGE MEMORY;

EID: 43049176376     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EDSSC.2007.4450202     Document Type: Conference Paper

References (6)

1. D. Ielmini, A. L. Lacaita, A. Pirovano, F. Pellizzer, and R. Bez, "Analysis of phase distribution in phase-change nonvolatile memories," IEEE Electron Device Letters, Vol. 25, pp. 507-509, July 2004.
2. D. S. Chao, et al.. "Comprehensive HSPICE Model of Phase Change Memory Cell for Static and Transient Programming", Proc. 2007 Internat. Conf. on. Solid State Devices and Materials, to be published in Sep. 2007.
3. Accellera, "Verilog_AMS Language Reference Manual Version2.2, November 2004", available online: http://www.accellera.org/home.
4. HSPICE user's manual, version 2006.03.
5. Y.-B. Liao, Y.-K. Chen, and M.-H. Chiang, "Phase Change Memory Modeling Using Verilog-A," Proc. 2007 IEEE Internal. Behavioral Modeling and Simulation Conf, to be published in Sep. 2007.
6. X. Q. Wei, et al., "HSPICE Macromodel of PCRAM for Binary and Multilevel Storage", IEEE Trans. Electron Devices, Vol. 53, pp. 56-62, Jan. 2006.