Joint reliability of double-side packaged SiC power devices to a DBC substrate with high temperature solders

10th Electronics Packaging Technology Conference, EPTC 2008

Volumn , Issue , 2008, Pages 897-902

  Lang, Fengqun ^a   Hayashi, Yusuke ^a   Nakagawa, Hiroshi ^a   Aoyagi, Masahiro ^a   Ohashi, Hiromichi ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; ALUMINUM OXIDE; BINARY ALLOYS; CHIP SCALE PACKAGES; DIES; ELECTRIC RESISTANCE; ELECTRODES; III-V SEMICONDUCTORS; LEAD ALLOYS; METALLIZING; OXIDE FILMS; RELIABILITY; SILICON CARBIDE; SILVER; STUDS (FASTENERS); STUDS (STRUCTURAL MEMBERS); SUBSTRATES;

AFTER HIGH TEMPERATURE; DIRECT BONDED COPPERS; ELECTRICAL RESISTANCES; HIGH POWER DENSITY; HIGH TEMPERATURE AGING; HIGH TEMPERATURE SOLDERS; MECHANICAL AND ELECTRICAL PROPERTIES; THREE-DIMENSIONAL (3D) PACKAGING;

POWER SEMICONDUCTOR DEVICES;

EID: 63049118291     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EPTC.2008.4763544     Document Type: Conference Paper

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