Spatially resolved doping concentration measurement in semiconductors via spin noise spectroscopy

Applied Physics Letters

Volumn 94, Issue 11, 2009, Pages

  Romer M ^a   Hubner J ^a   Oestreich, M ^a  

^a LEIBNIZ UNIVERSITY HANNOVER   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALS; ELECTRIC CONDUCTIVITY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR MATERIALS; SPIN DYNAMICS; THREE DIMENSIONAL;

DEPTH-RESOLVED; DOPING CONCENTRATIONS; DOPING LEVELS; GAAS; HIGH SPATIAL RESOLUTIONS; NON-CONTACT METHODS; PROOF OF CONCEPTS; RELATIVE ACCURACIES; SPATIAL ACCURACIES; SPATIALLY RESOLVED; SPIN NOISE SPECTROSCOPIES; SUB-MICROMETER RESOLUTIONS;

DOPING (ADDITIVES);

EID: 63049117161     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3098074     Document Type: Article

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