C-V profiling of GaAs using electrolyte barriers

Crystal Research and Technology

Volumn 36, Issue 8-10, 2001, Pages 1113-1118

  Kaniewska, M ^a   Slomka, I ^a  

^a ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

Author keywords

Electrochemical C V profiling; Electrolyte barriers; GaAs; Oval defects

Indexed keywords

CARRIER CONCENTRATION; ELECTROCHEMISTRY; ELECTROLYTES; EPITAXIAL GROWTH; ETCHING; MOLECULAR BEAM EPITAXY; MULTILAYERS; OPTIMIZATION; SCHOTTKY BARRIER DIODES;

ELECTROLYTE BARRIERS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0035171233     PISSN: 02321300     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-4079(200110)36:8/10<1113::AID-CRAT1113>3.0.CO;2-W     Document Type: Conference Paper

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