CMOS-compatible nanoscale gas-sensor based on field effect

Physica Status Solidi (A) Applications and Materials Science

Volumn 206, Issue 3, 2009, Pages 474-483

  Velasco Velez, J J ^a   Chaiyboun, A ^a   Wilbertz, C ^b   Woellenstein, J ^c   Bauersfeld, M ^c   Doll, T ^a  

^a JOHANNES GUTENBERG UNIVERSITY   (Germany)

^b Micronas GmbH Freiburg   (Germany)

^c FRAUNHOFER INSTITUTE FOR PHYSICAL MEASUREMENT TECHNIQUES IPM   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS TECHNOLOGIES; CMOS-COMPATIBLE; DEBYE LENGTHS; DRIFT EFFECTS; ELECTRICAL FIELDS; ELECTRICAL MODELS; EXTERNAL ELECTRIC FIELDS; FABRICATION PROCESS; FERMI ENERGY LEVELS; FIELD EFFECTS; FIELD-EFFECT GAS SENSORS; GAS SENSITIVITIES; GAS-SENSING; HIGH TEMPERATURES; INSULATED GATE FIELD EFFECT TRANSISTORS; LAYER THICKNESS; METAL OXIDES; METAL-OXIDE SENSORS; NANO-SCALE; OPERATION TEMPERATURES; SENSOR OPERATIONS; SENSOR RESPONSE; SILICON DEVICES; SOLID-STATE GAS SENSORS;

CMOS INTEGRATED CIRCUITS; ELECTRIC FIELDS; FERMI LEVEL; FERMIONS; FIELD EFFECT TRANSISTORS; GAS DETECTORS; GAS SENSING ELECTRODES; GASES; METALLIC COMPOUNDS; POLYSILICON;

SENSORS;

EID: 63049106867     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200880474     Document Type: Article

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