Effects of cetyltrimethylammonium bromide on redox deposition and rectification properties of silicon oxide thin film

Thin Solid Films

Volumn 517, Issue 11, 2009, Pages 3230-3234

  Chigane, Masaya ^a   Izaki, Masanobu ^b   Watanabe, Mitsuru ^a   Yamaguchi, Ippei ^c   Shinagawa, Tsutomu ^a   Ishikawa, Masami ^a  

^a OSAKA MUNICIPAL TECHNICAL RESEARCH INSTITUTE   (Japan)

^b TOYOHASHI UNIVERSITY OF TECHNOLOGY   (Japan)

^c DOSHISHA UNIVERSITY   (Japan)

Author keywords

Cetyltrimethylammonium bromide; Rectification property; Redox deposition; Silicon oxide; Thin film

Indexed keywords

AGGLOMERATION; AMMONIUM COMPOUNDS; DOPING (ADDITIVES); ELECTRIC RECTIFIERS; FILM GROWTH; FLUORINE; INFRARED SPECTROSCOPY; NONMETALS; ORGANIC POLYMERS; PHOTOELECTRON SPECTROSCOPY; SILICA; SILICON OXIDES; SILICON WAFERS; SPECTROSCOPIC ANALYSIS; THIN FILM DEVICES; THIN FILMS; TIN; TITANIUM COMPOUNDS; X RAY PHOTOELECTRON SPECTROSCOPY;

AGGREGATION OF SILICA PARTICLES; AMMONIUM HEXAFLUOROSILICATE; AQUEOUS SOLUTIONS; CETYLTRIMETHYLAMMONIUM BROMIDE; DEPTH PROFILES; DIMETHYLAMINE BORANES; ETHYLENEDIOXYTHIOPHENE; FLUORINE-DOPED TIN OXIDES; RECTIFICATION PROPERTY; REDOX DEPOSITION; SILICON OXIDE THIN FILMS; SILICON WAFER SUBSTRATES; X-RAY PHOTOELECTRONS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 62849108230     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2008.10.118     Document Type: Article

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